Fundamentals of semiconductor devices

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About Course

This course provides the essential foundations required to understand the operation of semiconductor devices such as transistors, diodes, solar cells, light-emitting devices, and more. The material will primarily appeal to electrical engineering students whose interests are in applications of semiconductor devices in circuits and systems. The treatment is physical and intuitive, and not heavily mathematical.

Technology users will gain an understanding of the semiconductor physics that is the basis for devices. Semiconductor technology developers may find it a useful starting point for diving deeper into condensed matter physics, statistical mechanics, thermodynamics, and materials science. The course presents an electrical engineering perspective on semiconductors, but those in other fields may find it a useful introduction to the approach that has guided the development of semiconductor technology for the past 50+ years.

Who can take this course?

-Engineering Students

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What Will You Learn?

  • Students will learn about the following specific topics:
  • energy bands
  • band gaps
  • effective masses
  • electrons and holes
  • basics of quantum mechanics
  • the Fermi function
  • the density-of-states
  • intrinsic carrier density
  • doping and carrier concentrations
  • carrier transport
  • generation-recombination
  • quasi-Fermi levels
  • the semiconductor equations
  • energy band diagrams

About the instructor

Course Curriculum

Fundamentals of semiconductor devices

  • Introduction to semiconductors
    00:00
  • Introduction to energy bands
    00:00
  • Fundamentals of band structure
    00:00
  • Band structure (contd.) and Fermi-Dirac distribution
    00:00
  • Density of states
    00:00
  • Doping and intrinsic carrier concentration
    00:00
  • Equilibrium carrier concentration
    00:00
  • Temperature-dependence of carrier concentration
    00:00
  • High doping effects and incomplete ionization
    00:00
  • Carrier scattering and mobility
    00:00
  • Low-field and high-field transport, introduction to diffusion
    00:00
  • Drift-diffusion and trap statistics
    00:00
  • Current continuity equation
    00:00
  • Continuity equation (contd.) and introduction to p-n junction
    00:00
  • Application of p-n junctions
    00:00
  • Breakdown of junction and C-V profiling
    00:00
  • p-n junction under equilibrium
    00:00
  • p-n junction under equilibrium (contd.)
    00:00
  • p-n junction under bias
    00:00
  • p-n junction under bias (contd.)
    00:00
  • p-n junction: generation-recombination currents
    00:00
  • Introduction to Schottky junction
    00:00
  • Schottky junction under equilibrium
    00:00
  • Schottky junction under bias
    00:00
  • Introduction to transistors: BJT
    00:00
  • Basics of BJT
    00:00
  • Working of BJT
    00:00
  • Working of BJT (contd)
    00:00
  • Delays in BJT
    00:00
  • MOS: Introduction
    00:00
  • MOS: Capacitance-voltage
    00:00
  • Ideal MOS system: derivation of threshold voltage
    00:00
  • MOS C-V in more details
    00:00
  • MOSFET – An introduction
    00:00
  • Gradual Channel Approximation: Derivation of I-V characteristics
    00:00
  • Substrate bias effect and subthreshold conduction in MOSFET
    00:00
  • Short Channel Effects in MOSFET
    00:00
  • Introduction to compound semiconductors
    00:00
  • Basics of heterojunctions
    00:00
  • Band diagram of heterojunctions
    00:00
  • Heterojunctions (contd).
    00:00
  • Heterojunction transistors
    00:00
  • III-nitrides
    00:00
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