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Fundamentals of semiconductor devices

  • Course level: All Levels

Description

This course provides the essential foundations required to understand the operation of semiconductor devices such as transistors, diodes, solar cells, light-emitting devices, and more. The material will primarily appeal to electrical engineering students whose interests are in applications of semiconductor devices in circuits and systems. The treatment is physical and intuitive, and not heavily mathematical.

Technology users will gain an understanding of the semiconductor physics that is the basis for devices. Semiconductor technology developers may find it a useful starting point for diving deeper into condensed matter physics, statistical mechanics, thermodynamics, and materials science. The course presents an electrical engineering perspective on semiconductors, but those in other fields may find it a useful introduction to the approach that has guided the development of semiconductor technology for the past 50+ years.

Who can take this course?

-Engineering Students

What Will I Learn?

  • Students will learn about the following specific topics:
  • energy bands
  • band gaps
  • effective masses
  • electrons and holes
  • basics of quantum mechanics
  • the Fermi function
  • the density-of-states
  • intrinsic carrier density
  • doping and carrier concentrations
  • carrier transport
  • generation-recombination
  • quasi-Fermi levels
  • the semiconductor equations
  • energy band diagrams

Topics for this course

59 Lessons

Fundamentals of semiconductor devices

Introduction to semiconductors00:00:00
Introduction to energy bands00:00:00
Fundamentals of band structure00:00:00
Band structure (contd.) and Fermi-Dirac distribution00:00:00
Density of states00:00:00
Doping and intrinsic carrier concentration00:00:00
Equilibrium carrier concentration00:00:00
Temperature-dependence of carrier concentration00:00:00
High doping effects and incomplete ionization00:00:00
Carrier scattering and mobility00:00:00
Low-field and high-field transport, introduction to diffusion00:00:00
Drift-diffusion and trap statistics00:00:00
Current continuity equation00:00:00
Continuity equation (contd.) and introduction to p-n junction00:00:00
Application of p-n junctions00:00:00
Breakdown of junction and C-V profiling00:00:00
p-n junction under equilibrium00:00:00
p-n junction under equilibrium (contd.)00:00:00
p-n junction under bias00:00:00
p-n junction under bias (contd.)00:00:00
p-n junction: generation-recombination currents00:00:00
Introduction to Schottky junction00:00:00
Schottky junction under equilibrium00:00:00
Schottky junction under bias00:00:00
Introduction to transistors: BJT00:00:00
Basics of BJT00:00:00
Working of BJT00:00:00
Working of BJT (contd)00:00:00
Delays in BJT00:00:00
MOS: Introduction00:00:00
MOS: Capacitance-voltage00:00:00
Ideal MOS system: derivation of threshold voltage00:00:00
MOS C-V in more details00:00:00
MOSFET – An introduction00:00:00
Gradual Channel Approximation: Derivation of I-V characteristics00:00:00
Substrate bias effect and subthreshold conduction in MOSFET00:00:00
Short Channel Effects in MOSFET00:00:00
Introduction to compound semiconductors00:00:00
Basics of heterojunctions00:00:00
Band diagram of heterojunctions00:00:00
Heterojunctions (contd).00:00:00
Heterojunction transistors00:00:00
III-nitrides00:00:00
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semiconductor devices
35 £

Enrolment validity: Lifetime